CSDD-25M csdd-25n surface mount silicon controlled rectifier 25 amp, 600 thru 800 volts description: the central semiconductor CSDD-25M series type is an epoxy molded silicon controlled rectifier designed for sensing circuit applications and control systems. marking: full part number maximum ratings: (t c =25c unless otherwise noted) symbol CSDD-25M csdd-25n units peak repetitive off-state voltage v drm, v rrm 600 800 v rms on-state current (t c =90c) i t(rms) 25 a peak non-repetitive surge current, t=8.3ms i tsm 260 a peak non-repetitive surge current, t=10ms i tsm 250 a i 2 t value for fusing, t=10ms i 2 t 310 a 2 s peak gate power, tp=10s p gm 40 w average gate power dissipation p g(av) 1.0 w peak forward gate current, tp=10s i fgm 4.0 a peak forward gate voltage, tp=10s v fgm 16 v peak reverse gate voltage, tp=10s v rgm 5.0 v critical rate of rise of on-state current di/dt 100 a/s operating junction temperature t j -40 to +125 c storage temperature t stg -40 to +150 c thermal resistance ja 60 c/w thermal resistance jc 1.3 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min typ max units i drm, i rrm rated v drm, v rrm 10 a i drm, i rrm rated v drm, v rrm, t c =125c 4.0 ma i gt v d =12v, r l =10 4.2 30 ma i h i t =100ma 12.5 50 ma v gt v d =12v, r l =10 0.65 1.50 v v tm i tm =50a, tp=380s 1.80 v dv/dt v d = 2 / 3 v drm, t c =125c 200 v/s d 2 pak case r2 (17-february 2010) www.centralsemi.com
CSDD-25M csdd-25n surface mount silicon controlled rectifier 25 amp, 600 thru 800 volts lead code: 1) cathode 2) anode 3) gate 4) anode marking: full part number d 2 pak case - mechanical outline www.centralsemi.com r2 (17-february 2010)
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